Bismuth silicon oxide (Bi12SiO20) exhibit piezoelectric, electro-optic, elasto-optic and photoconductive properties, and therefore have potential applications inspatial light modulators, acoustic delay lines, hologram recording equipment and phase conjugation etc.
BSO show unique combination of different physical properties. BSO crystals are very efficient photoconductors with low dark conductivity that allow a build-up of large photo-induced space-charges. Also strong spectral dependence of the photoconductivity and their electrooptic properties allow to develop and produce a wide range of optical devices and systems. BSO crystal are used in spatial light modulators, dynamic real-time hologram recording devices, phase conjugation wave mixing, optical correlators, and optical laser systems for adaptive correction of ultrashort light pulses. Photo-induced absorption make it possible to develop and produce light-light type of optical devices such as optical modulators, switches etc. The fabrication Sillenite Oxide thin-film crystal structures by different technique permits the development of a long list of devices including optical waveguides, integrated optical devices. The use of waveguide optical structures based on Sillenites allows to achieve uniform illumination (normally to the plane of waveguide) in a wide spectral range. The relatively large electrooptic and Faraday effect of Sillenite Oxides makes them useful for optical fiber electric/magnetic fields sensors.
Features:
Wide range of applications
Perfect for electro-optical and acousto-optical applications
Suitable for pyroelectrical applications
High phase conjugation efficiency
Not soluble in water or organic solvents
Applications:
Custom design production is available
Mass production available 500 pieces per month
Pockels readout optical memory (PROM)
Thin film optical waveguides
Photorefraction and phase conjugation
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Crystal
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Bi12SiO20 (BSO)
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Bi12GeO20 (BGO)
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Fe:LiNbO3
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Crystal Structure
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cubic, point group: 23
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cubic, point group: 23
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Trigonal, 3m
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Lattice(Cell) Parameters,
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10.1
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10.15
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-
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Transmission Range, m
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0.4-6
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0.4-7
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0.35 - 5.5
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Refractive Index at 0.63m
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2.54
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2.55
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2.20 (ne), 2.29 (no)
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Electro-Optic Coefficient r41, pm/V
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5
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3.5
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r22=6.8, r31=10, r33=32
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Optical Activity, deg/mm at 500 nm
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42
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41.5
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-
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- deg/mm at 600 nm
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25
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24
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-
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